I NTEGRATED C IRCUITS D IVISION
IXD_602
5 Manufacturing Information
5.1 Moisture Sensitivity
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits Division classified all of its plastic encapsulated devices for moisture sensitivity according to the
latest version of the joint industry standard, IPC/JEDEC J-STD-020 , in force at the time of product
evaluation. We test all of our products to the maximum conditions set forth in the standard, and guarantee
proper operation of our devices when handled according to the limitations and information in that standard as well as
to any limitations set forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a Moisture Sensitivity Level (MSL) rating as shown below, and should be handled according to
the requirements of the latest version of the joint industry standard IPC/JEDEC J-STD-033 .
Device
IXD_602SI / IXD_602SIA / IXD_602PI
IXD_602D2
Moisture Sensitivity Level (MSL) Rating
MSL 1
MSL 3
5.2 ESD Sensitivity
This product is ESD Sensitive , and should be handled according to the industry standard
JESD-625 .
5.3 Reflow Profile
This product has a maximum body temperature and time rating as shown below. All other guidelines of J-STD-020
must be observed.
Device
IXD_602SI / IXD_602SIA / IXD_602D2
IXD_602PI
Maximum Temperature x Time
260°C for 30 seconds
250°C for 30 seconds
Pb
e 3
10
www.ixysic.com
R05
相关PDF资料
IXDN630CI IC GATE DRIVER LOW SIDE 5TO220
IXDS430SI IC DRVR MOSF/IGBT 30A 28-SOIC
IXS839S1T/R IC MOSFET DRIVER SYNC BUCK 8SOIC
JLINK-RX-AD ADAPT BD FOR MINI-JTAG CONNECTOR
JMBADGE2008-B BOARD JM BADGE
JP9902 CONN JACK MOD INSERT W/O HOLES
JTAGJET-C2000 JTAG EMULATOR FOR TI C2000 MCU
JTAGJET-CCS JTAG EMULATOR TI C2000/5000/6000
相关代理商/技术参数
IXDN602SI 功能描述:MOSFET N-CH 2A DUAL LO SIDE 8-SO RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:半桥 输入类型:PWM 延迟时间:25ns 电流 - 峰:1.6A 配置数:1 输出数:2 高端电压 - 最大(自引导启动):118V 电源电压:9 V ~ 14 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1282 (CN2011-ZH PDF) 其它名称:*LM5104M*LM5104M/NOPBLM5104M
IXDN602SIA 功能描述:DUAL LOW SIDE MOSFET DRIVER RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:高端和低端,独立 输入类型:非反相 延迟时间:160ns 电流 - 峰:290mA 配置数:1 输出数:2 高端电压 - 最大(自引导启动):600V 电源电压:10 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1381 (CN2011-ZH PDF)
IXDN602SIATR 功能描述:2A 8 LEAD SOIC DUAL NON INVERTIN RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IXDN602SITR 功能描述:2A 8SOIC EXP MTL DUAL NON INVERT RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET,电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大(自引导启动):- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6,D²Pak(5 引线+接片),TO-263BA 供应商设备封装:TO-263 包装:管件
IXDN604PI 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN604SI 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN604SIA 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
IXDN604SIATR 功能描述:功率驱动器IC 4A Dual Low-Side Ultrafast Mosfet DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube